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  smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 BF820,bf822 features low current (max. 50 ma) high voltage (max. 300 v). electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i e =0;v cb = 200 v 10 na i e =0;v cb = 200 v; t j = 150 10 a emitter cutoff current i ebo i c =0;v eb =5v 50 na dc current gain * h fe i c =25ma;v ce =20v 50 collector-emitter saturation voltage v cesat i c =30ma;i b = 5 ma 600 mv feedback capacitance c re i c =ic=0;v cb =30v;f=1mhz 1.6 pf transition frequency f t i c =10ma;v ce =10v;f=100mhz 60 mhz collector cutoff current i cbo absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage BF820 300 v bf822 250 v collector-emitter voltage BF820 300 v bf822 250 v emitter-base voltage v ebo 5v collector current i c 50 ma peak collector current i cm 100 ma peak base current i bm 50 ma total power dissipation * p tot 250 mw storage temperature t stg -65to+150 junction temperature t j 150 operating ambient temperature r amb -65to+150 thermal resistance from junction to ambient * r th j-a 500 k/w * transistor mounted on an fr4 printed-circuit board. v ceo v cbo h fe classification type BF820 bf822 marking 1v 1x sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123


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